The volume expansion of the 1120 planar defect in 2H-GaN/6H-SiC (0001)Si grown by MBE

• Published in: Thin solid films Vol. 319; no. 1-2; pp. 153 - 156
• Main Authors: VERMAUT, P, BERE, A, RUTERANA, P, NOUET, G, HAIRIE, A, PAUMIER, E
• Format: Conference Proceeding
• Language: English
• Published: Lausanne Elsevier Science 1998
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Electron, ion, and scanning probe microscopy; Exact sciences and technology; Physics; Stacking faults and other planar or extended defects; Structure of solids and liquids; crystallography; Transmission, reflection and scanning electron microscopy(including ebic); Stacking faults; Inorganic compounds; Gallium nitrides; Silicon carbides; Binary compounds; Plane defects; Solid-solid interfaces; Experimental study; High-resolution methods; Aluminium nitrides; Crystal defect relaxation; Defect structure; TEM; III-V semiconductors
• ISSN: 0040-6090; 1879-2731