Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects: Silicon Carbide. Current Trends in Research and Applications

Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects Silicon Carbide. Current Trends in Research and Applications

Saved in:
Bibliographic Details
Published in:Physica status solidi. B. Basic research Vol. 245; no. 7; pp. 1272 - 1280
Main Authors: NAGASAWA, Hiroyuki, ABE, Masayuki, YAGI, Kuniaki, KAWAHARA, Takamitsu, HATTA, Naoki
Format: Journal Article
Language:English
Published: Berlin Wiley 2008
Subjects:
Applied sciences
Electrical engineering. Electrical power engineering
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Power electronics, power supplies
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
MOS technology
Field effect transistor
High performance
Homoepitaxy
MOSFET
Silicon carbide
High power
Polytypism
Stacking fault
Polarity
Leakage current
Power electronics
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
ISSN:0370-1972
1521-3951