Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence Groups in Nitrides, SiC and ZnO

• Published in: Journal of electronic materials Vol. 37; no. 5; pp. 603 - 606
• Main Authors: AKAGI, T, KOSAKA, K, HARUI, S, MUTO, D, NAOI, H, ARAKI, T, NANISHI, Y
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 2008
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Exact sciences and technology; Interaction between different crystal defects; gettering effect; Linear defects: dislocations, disclinations; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Structure of solids and liquids; crystallography; Buffer layer; CL dark spot; dislocation; TDS; High density; Non radiative recombination; Template reaction; InN; infrared; Cathodoluminescence; Radiofrequency; III-V compound; Thin films; Threading dislocation; Crystal defect interaction; Molecular beam epitaxy; Vertical alignment; Indium nitride
• ISSN: 0361-5235; 1543-186X