Growth mode induced carrier localization in InGaN/GaN quantum wells: Intentional and unintentional localization in InGaN

Growth mode induced carrier localization in InGaN/GaN quantum wells Intentional and unintentional localization in InGaN

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Bibliographic Details
Published in:Philosophical magazine (Abingdon, England) Vol. 87; no. 13; pp. 2067 - 2075
Main Authors: GRANDJEAN, N, FELTIN, E, BUTTE, R, CARLIN, J.-F, SONDEREGGER, S, DEVEAUD, B, GANIERE, J.-D
Format: Journal Article
Language:English
Published: Abingdon Taylor and Francis 2007
Subjects:
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Nanoscale materials and structures: fabrication and characterization
Other topics in nanoscale materials and structures
Physics
Quantum wells
Theory and models of film growth
Atomic force microscopy
Potential barrier
Gallium nitrides
Epitaxy
Surface morphology
Quantum wells
Organometallic compounds
Luminescence
Radiative recombination
Cathodoluminescence
Time resolved spectra
Dislocation density
Time resolution
Threading dislocation
Optical properties
Growth mechanism
Indium nitrides
Nanostructured materials
III-V semiconductors
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ISSN:1478-6435
1478-6443