Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance: Special issue on SiC and the group III nitride semiconductors

Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance Special issue on SiC and the group III nitride semiconductors

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Bibliographic Details
Published in:Journal of electronic materials Vol. 34; no. 4; pp. 330 - 335
Main Authors: CHA, Ho-Young, CHOI, Y. C, EASTMAN, L. F, SPENCER, M. G, ARDARAVICIUS, L, MATULIONIS, A, KIPRIJANOVIC, O
Format: Journal Article
Language:English
Published: New York, NY Institute of Electrical and Electronics Engineers 2005
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Field effect devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Binary compound
mobility
Voltage current curve
Charge carrier mobility
Theoretical study
transport
SiC
Modeling
Inorganic compound
Metal-semiconductor field-effect transistor (MESFET)
Field effect transistor
Silicon carbide
Drain current
Numerical simulation
Wide band gap semiconductors
Performance
Current density
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Description
ISSN:0361-5235
1543-186X