Plasma damage in p-GaN: Special issue on III-IV Nitrides and Silicon Carbide

Plasma damage in p-GaN Special issue on III-IV Nitrides and Silicon Carbide

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Bibliographic Details
Published in:Journal of electronic materials Vol. 29; no. 3; pp. 256 - 261
Main Authors: CAO, X. A, ZHANG, A. P, DANG, G. T, REN, F, PEARTON, S. J, VAN HOVE, J. M, HICKMAN, R. A, SHUL, R. J, ZHANG, L
Format: Journal Article
Language:English
Published: New York, NY Institute of Electrical and Electronics Engineers 2000
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor-device characterization, design, and modeling
Inductively coupled plasma
Electric breakdown
Voltage current curve
Diode
Disruptive voltage
Schottky barrier diode
Experimental study
Gallium nitride
Damaging
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Description
ISSN:0361-5235
1543-186X