Real-time observation of the dry oxidation of the Si (100) surface with ambient pressure x-ray photoelectron spectroscopy

We have applied ambient-pressure x-ray photoelectron spectroscopy with Si 2p chemical shifts to study the real-time dry oxidation of Si(100), using pressures in the range of 0.01-1 Torr and temperatures of 300-530 oC, and examining the oxide thickness range from 0 to ~;;25 Angstrom. The oxidation ra...

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Bibliographic Details
Published in:	Applied physics letters Vol. 92; no. 12110
Main Authors:	Enta, Y., Mun, B.S., Rossi, M., Ross Jr, P.N., Hussain, Zahid, Fadley, C.S., Lee, K.-S., Kim, S.-K.
Format:	Journal Article
Language:	English
Published:	United States 20-09-2007
Subjects:	CHEMICAL SHIFT CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY OXIDATION OXIDES THICKNESS X-RAY PHOTOELECTRON SPECTROSCOPY
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Summary:	We have applied ambient-pressure x-ray photoelectron spectroscopy with Si 2p chemical shifts to study the real-time dry oxidation of Si(100), using pressures in the range of 0.01-1 Torr and temperatures of 300-530 oC, and examining the oxide thickness range from 0 to ~;;25 Angstrom. The oxidation rate is initially very high (with rates of up to ~;;225 Angstrom/h) and then, after a certain initial thickness of the oxide in the range of 6-22 Angstrom is formed, decreases to a slow state (with rates of ~;;1.5-4.0 Angstrom/h). Neither the rapid nor the slow regime is explained by the standard Deal-Grove model for Si oxidation.
Bibliography:	DE-AC02-05CH11231 Advanced Light Source Division LBNL-3112E
ISSN:	0003-6951 1077-3118