YBa sub 2 Cu sub 3 O sub 7 minus x to Si interconnection for hybrid superconductor/ semiconductor integration

• Published in: Applied physics letters Vol. 61:18
• Main Authors: Harvey, T.E., Moreland, J., Jeanneret, B., Ono, R.H., Rudman, D.A.
• Format: Journal Article
• Language: English
• Published: United States 02-11-1992
• Subjects: 426000 - Engineering- Components, Electron Devices & Circuits- (1990-); 665412 - Superconducting Devices- (1992-); ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; BARIUM OXIDES; CHALCOGENIDES; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONDUCTOR DEVICES; CONNECTORS; COPPER COMPOUNDS; COPPER OXIDES; CRYSTAL STRUCTURE; ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; ENGINEERING; FABRICATION; HIGH-TC SUPERCONDUCTORS; INTEGRATED CIRCUITS; MICROELECTRONIC CIRCUITS; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; SUPERCONDUCTING FILMS; SUPERCONDUCTORS; TRANSITION ELEMENT COMPOUNDS; WIRES; YTTRIUM COMPOUNDS; YTTRIUM OXIDES
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.108275

We have successfully made low resistance contacts between high-quality films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} (YBCO) and single-crystal Si substrates through Ag-Au interconnections. The YBCO films were deposited by laser ablation on an epitaxial yttria-stabilized zirconia buffer layer on Si and had zero-resistance critical temperatures of 83--85 K after patterning into lines. Specific contact resistivities (resistance-area products) of the YBCO to Si interconnection, limited by the Au to Si interface, of 10{sup {minus}6} {Omega} cm{sup 2} were achieved on heavily doped Si after deposition and patterning of the YBCO film. This demonstrates the use of high-temperature superconductors as a wiring layer compatible with conventional Si metal-oxide-semiconductor processing.