Thickness dependence of the charge-density-wave transition temperature in VSe{sub 2}

• Published in: Applied physics letters Vol. 105; no. 6
• Main Authors: Yang, Jiyong, Liu, Yan, Du, Haifeng, Ning, Wei, Zheng, Guolin, Jin, Chiming, Han, Yuyan, Wang, Ning, Tian, Mingliang, Zhang, Yuheng, Wang, Weike, Yang, Zhaorong
• Format: Journal Article
• Language: English
• Published: United States 11-08-2014
• Subjects: CHARGE DENSITY; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; MAGNETIC FIELDS; NANOSTRUCTURES; TRANSITION TEMPERATURE; VANADIUM SELENIDES
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4893027

A set of three-dimensional charge-density-wave (3D CDW) VSe{sub 2} nano-flakes with different thicknesses were obtained by the scotch tape-based micro-mechanical exfoliation method. Resistivity measurements showed that the 3D CDW transition temperature T{sub p} decreases systematically from 105 K in bulk to 81.8 K in the 11.6 nm thick flake. The Hall resistivity ρ{sub xy} of all the flakes showed a linear dependent behavior against the magnetic field with a residual electron concentration of the order of ∼10{sup 21} cm{sup −3} at 5 K. The electron concentration n increases slightly as the thickness d decreases, possibly due to the CDW gap is reduced with the decrease of the thickness.