Intense femtosecond photoexcitation of bulk and monolayer MoS{sub 2}

• Published in: Applied physics letters Vol. 105; no. 4
• Main Authors: Paradisanos, I., Fotakis, C., Physics Department, University of Crete, Heraklion 71003, Kymakis, E., Kioseoglou, G., Stratakis, E., Materials Science and Technology Department, University of Crete, Heraklion 71003
• Format: Journal Article
• Language: English
• Published: United States 28-07-2014
• Subjects: ABSORPTION; ATOMS; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EXCITATION; FIELD EMISSION; IRRADIATION; LASER RADIATION; MOLYBDENUM SULFIDES; PHOTONS; RAMAN EFFECT; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4891679

The effect of femtosecond laser irradiation on bulk and single-layer MoS{sub 2} on silicon oxide is studied. Optical, field emission scanning electron microscopy and Raman microscopy were used to quantify the damage. The intensity of A{sub 1g} and E{sub 2g}{sup 1} vibrational modes was recorded as a function of the number of irradiation pulses. The observed behavior was attributed to laser-induced bond breaking and subsequent atoms removal due to electronic excitations. The single-pulse optical damage threshold was determined for the monolayer and bulk under 800 nm and 1030 nm pulsed laser irradiation, and the role of two-photon versus one photon absorption effects is discussed.