Study of optical parameters of the Se-As chalcogenide semiconductor system containing EuF{sub 3} impurities

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 45; no. 8
• Main Authors: Isayev, A. I., Mekhtiyeva, S. I., Garibova, S. N., Alekperov, R. I., Zeynalov, V. Z.
• Format: Journal Article
• Language: English
• Published: United States 15-08-2011
• Subjects: EUROPIUM FLUORIDES; IMPURITIES; MATERIALS SCIENCE; RARE EARTHS; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782611080100

Optical properties of chalcogenide vitreous semiconductors of composition Se{sub 95}As{sub 5} containing different amounts of rare-earth metal fluorides (EuF{sub 3}) are studied, and, on this basis, the fundamental parameters, such as the refractive index and extinction coefficient, are determined. The dependences of these parameters on the content of EuF{sub 3} molecules are nonmonotonic: the low content (below 0.25 at %) aids in decreasing the parameters, whereas the high content tends to increase them. From the analysis of the results with consideration for the structural features of chalcogenide vitreous semiconductors of the Se{sub 95}As{sub 5} system (the presence of ordered high-coordinated microregions separated from each other by regions with a lower atomic density), it is concluded that the optical properties of the chalcogenide vitreous semiconductor system under study can be described in the context of Penn's model.