The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering

• Published in: Applied physics letters Vol. 85; no. 19
• Main Authors: Heng, C.L., Finstad, T.G., Storaas, P., Li, Y.J., Gunnaes, A.E., Nilsen, O., SINTEF ICT, Department of Microsystems and Nanotechnology, N-0314 Oslo, Centre for Materials Science and Nanotechnology, Department of Physics, University of Oslo, N-0349, Department of Chemistry, University of Oslo, N-0315
• Format: Journal Article
• Language: English
• Published: United States 08-11-2004
• Subjects: AMORPHOUS STATE; ANNEALING; DEPOSITION; DOPED MATERIALS; ERBIUM IONS; GERMANIUM IONS; MAGNETRONS; MATERIALS SCIENCE; NANOSTRUCTURES; PHOTOLUMINESCENCE; SILICON OXIDES; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; TIME DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.1819514

In this work, we report on quite strong 1.54-{mu}m photoluminescence (PL) from an (Er, Ge) co-doped SiO{sub 2} film deposited by rf magnetron sputtering. The PL intensity reaches a maximum value after the film is annealed at 700 deg. C for 30 min in N{sub 2}. High-resolution transmission electron microscopy observation, together with energy dispersive x-ray spectroscopy analysis, indicates that amorphous Ge-rich nanoclusters precipitate in the film after 700 deg. C annealing. X-ray diffraction shows the presence of Ge nanocrystals after 900 deg. C annealing, and increasing Ge nanocrystal size with increasing annealing temperature up to 1100 deg. C. The results suggest that the amorphous Ge-rich nanoclusters are more effective than Ge nanocrystals in exciting the Er{sup 3+} PL.