InAs Nanocrystals with Robust p-Type Doping

Robust control over the carrier type is fundamental for the fabrication of nanocrystal-based optoelectronic devices, such as the p–n homojunction, but effective incorporation of impurities in semiconductor nanocrystals and its characterization is highly challenging due to their small size. In this w...

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Bibliographic Details

Published in:	Advanced functional materials Vol. 31; no. 6
Main Authors:	Asor, Lior, Liu, Jing, Ossia, Yonatan, Tripathi, Durgesh C., Tessler, Nir, Frenkel, Anatoly I., Banin, Uri
Format:	Journal Article
Language:	English
Published:	United States Wiley 03-11-2020
Subjects:	colloidal quantum dots doping field effect transistors InAs nanocrystals MATERIALS SCIENCE
Online Access:	Get full text
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