Millimeter-wave double-drift hybrid Read profile Si IMPATT diodes

Millimeter-wave double-drift hybrid Read profile Si IMPATT diodes

Double-drift Si IMPATT (impact avalanche and transit time) diodes with hybrid Read profiles were designed, fabricated and tested for millimeter-wave frequency operation. Vapor phase epitaxy (VPE) growth was used to achieve well-controlled, abrupt n-type doping transitions. The authors achieved 1.95...

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Bibliographic Details
Published in:IEEE International Digest on Microwave Symposium pp. 927 - 930 vol.2
Main Authors: Pao, C.K., Chen, J.C., Rolph, R.K., Igawa, A.T., Herman, M.I.
Format: Conference Proceeding
Language:English
Published: IEEE 1990
Subjects:
Diodes
Doping profiles
Epitaxial growth
Gallium arsenide
Millimeter wave technology
Molecular beam epitaxial growth
Pulse amplifiers
Silicon
Temperature
Throughput
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Summary:Double-drift Si IMPATT (impact avalanche and transit time) diodes with hybrid Read profiles were designed, fabricated and tested for millimeter-wave frequency operation. Vapor phase epitaxy (VPE) growth was used to achieve well-controlled, abrupt n-type doping transitions. The authors achieved 1.95 W with 11.7% efficiency at Q-band (40.6 GHz). At V-band, 1.05 W with 13.6% efficiency (61 GHz) was achieved, and an injection-locked amplifier achieved 20-dB gain, 800 mW and 2-GHz bandwidth with greater than 10% efficiency. Finally, at W-band, the authors achieved 612 mW with 5.7% efficiency (93 GHz) and for long pulse operation 1.08-W peak power at 96 GHz.< >
DOI:10.1109/MWSYM.1990.99730