A record high 150 GHz f/sub max/ realized at 0.18 /spl mu/m gate length in an industrial RF-CMOS technology

A record high 150 GHz f/sub max/ realized at 0.18 /spl mu/m gate length in an industrial RF-CMOS technology

We demonstrate that by careful layout optimisation, particularly aimed at reducing the effective gate resistance, a record high maximum oscillation frequency f/sub max/ of 150 GHz can be obtained for an industrial 0.18 /spl mu/m CMOS process showing a cut-off frequency f/sub T/ of 70 GHz. A very low...

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Bibliographic Details
Published in:International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) pp. 10.4.1 - 10.4.4
Main Authors: Tiemeijer, L.F., Boots, H.M.J., Havens, R.J., Scholten, A.J., de Vreede, P.H.W., Woerlee, P.H., Heringa, A., Klaassen, D.B.M.
Format: Conference Proceeding
Language:English
Published: IEEE 2001
Subjects:
Admittance measurement
Circuits
Cutoff frequency
Electrical resistance measurement
Fingers
Frequency measurement
Immune system
Medical simulation
Radio frequency
Silicidation
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Summary:We demonstrate that by careful layout optimisation, particularly aimed at reducing the effective gate resistance, a record high maximum oscillation frequency f/sub max/ of 150 GHz can be obtained for an industrial 0.18 /spl mu/m CMOS process showing a cut-off frequency f/sub T/ of 70 GHz. A very low minimum noise figure and good suppression of the substrate noise using a guard-ring is also shown.
ISBN:0780370503
9780780370500
DOI:10.1109/IEDM.2001.979471