Design guideline and performance prediction of 'SBB' SOI MOSFETs

• Published in: 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125) pp. 52 - 53
• Main Authors: Funakoshi, S., Terauchi, M., Terada, K.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2000
• Subjects: Capacitance; Circuit simulation; Guidelines; Impurities; Inverters; Leakage current; Medical simulation; MOSFETs; Propagation delay; Threshold voltage
• ISBN: 9780780363892; 0780363892
• ISSN: 1078-621X; 2577-2295
• DOI: 10.1109/SOI.2000.892765

Characteristics of 'self-body-biased' ('SBB') SOI MOSFETs (Terauchi and Terada, 1999) have been studied in detail. Static simulations show that both the desired off-state leakage current (I/sub off/) and the on-state current (I/sub on/) ratio (I/sub on//I/sub off/) can be achieved by independently changing the impurity concentration of the 'high Na' and the 'low Na' regions of 'SBB' SOI MOSFETs. Transient simulations reveal that an inverter made of 'SBB' CMOS devices has up to 30% shorter propagation delay (/spl tau//sub pd/) at a supply voltage of 0.9 V than that for a bulk CMOS inverter under a relatively heavy load condition (load capacitance of 1 pF).