Morphology and electrical behaviour of Pd/sub 2/Si/p-Si junctions

Dendrite like morphology was observed in Pd/sub 2/Si/p-Si junctions. The obtained high ideality factors and the significant difference between the apparent barrier heights evaluated from the current-voltage and capacitance-voltage measurements are explained on the basis of this morphology.

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Bibliographic Details
Published in:	ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) pp. 261 - 263
Main Authors:	Horvath, Z.J., Kumar, J., Dobos, L., Pecz, B., Toth, A.L., Chand, S., Karanyi, J.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 2000
Subjects:	Annealing Capacitance measurement Capacitance-voltage characteristics Current measurement Materials science and technology Morphology Physics Scanning electron microscopy Temperature distribution Thermionic emission
Online Access:	Get full text
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Description
Summary:	Dendrite like morphology was observed in Pd/sub 2/Si/p-Si junctions. The obtained high ideality factors and the significant difference between the apparent barrier heights evaluated from the current-voltage and capacitance-voltage measurements are explained on the basis of this morphology.
ISBN:	0780359399 9780780359390
DOI:	10.1109/ASDAM.2000.889496