Switching and HTRB characteristics of Highly reliable GaN MOS-HFET

Switching and HTRB characteristics of Highly reliable GaN MOS-HFET

The GaN MOS-HFET we have proposed could significantly reduce the maximum electric field of the MOS gate to 1/3 when the high reverse bias is applied. With this effect, High Temperature Reverse Bias (HTRB) characteristics were greatly improved compared with a conventional MOS-HFET. The device with sa...

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Bibliographic Details
Published in:2019 Compound Semiconductor Week (CSW) p. 1
Main Authors: Hoshi, Shinichi, Hata, Kensuke, Eum, Youngshin, Arakawa, Kazuki
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2019
Subjects:
Gallium nitride
Logic gates
Materials reliability
Research and development
Switches
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Summary:The GaN MOS-HFET we have proposed could significantly reduce the maximum electric field of the MOS gate to 1/3 when the high reverse bias is applied. With this effect, High Temperature Reverse Bias (HTRB) characteristics were greatly improved compared with a conventional MOS-HFET. The device with saturation current exceeding 60 A are fabricated and good switching characteristics are also reported in the paper.
DOI:10.1109/ICIPRM.2019.8819159