In search of a hole inversion layer in \mathrm/\mathrm/\mathrm diodes through I- V characterization using dedicated ring-shaped test structures

• Published in: 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) pp. 12 - 17
• Main Authors: Gupta, Gaurav, Thammaiah, Shivakumar D., Hueting, Raymond J. E., Nanver, Lis K.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-03-2019
• Subjects: Conductivity; diodes; Electrical resistance measurement; inversion layer; metal workfunction; molybdenum-oxide; Resistance; resistivity; Semiconductor device measurement; sheet resistance; Silicon; Structural rings; Substrates; ultrashal-low junctions
• ISBN: 9781728114644; 1728114640
• ISSN: 1071-9032
• DOI: 10.1109/ICMTS.2019.8730920

Palladium (Pd) capped molybdenum-oxide (MoO x ) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~ 10 8 and a low leakage current of ~ 10 -11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoO x . Reports in the literature that an inversion layer of holes should be present at the MoO x /n -Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any significant inversion was found.