InP/GaInAs/InP dual metal-semiconductor-metal photodetectors with a strained AlInP barrier enhancement layer for balanced heterodyne detection

InP/GaInAs/InP dual metal-semiconductor-metal photodetectors with a strained AlInP barrier enhancement layer for balanced heterodyne detection

A monolithic pair of InP/Ga/sub 0.47/In/sub 0.53/As/InP metal-semiconductor-metal photodetectors with a strained Al/sub 0.1/In/sub 0.9/P cap layer was fabricated. The dual photodetectors exhibit closely matched frequency characteristics. Effective laser intensity noise suppression and a beat signal...

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Bibliographic Details
Published in:Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) pp. 6 - 9
Main Authors: Shu, C., Chan, P.T., Hsu, C.C.
Format: Conference Proceeding
Language:English
Published: IEEE 1999
Subjects:
Detectors
Frequency
Gold
Indium phosphide
Laser noise
Optical buffering
Optical devices
Optical films
Photodetectors
Schottky barriers
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Summary:A monolithic pair of InP/Ga/sub 0.47/In/sub 0.53/As/InP metal-semiconductor-metal photodetectors with a strained Al/sub 0.1/In/sub 0.9/P cap layer was fabricated. The dual photodetectors exhibit closely matched frequency characteristics. Effective laser intensity noise suppression and a beat signal enhancement in 100 MHz balanced heterodyne detection was experimentally demonstrated.
ISBN:0780356489
9780780356481
DOI:10.1109/HKEDM.1999.836395