In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption
InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium th...
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Published in: | 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) pp. 268 - 271 |
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1998
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Abstract | InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain the As compositional profile which was carried over into the InP layer. |
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AbstractList | InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain the As compositional profile which was carried over into the InP layer. |
Author | Young Dong Kim Heedon Hwang Euijoon Yoon Tae-Wan Lee Youngboo Moon |
Author_xml | – sequence: 1 surname: Heedon Hwang fullname: Heedon Hwang organization: Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea – sequence: 2 surname: Tae-Wan Lee fullname: Tae-Wan Lee – sequence: 3 surname: Youngboo Moon fullname: Youngboo Moon – sequence: 4 surname: Euijoon Yoon fullname: Euijoon Yoon – sequence: 5 surname: Young Dong Kim fullname: Young Dong Kim |
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PublicationTitle | 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) |
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Snippet | InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As... |
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StartPage | 268 |
SubjectTerms | Application specific processors Ash Chemical vapor deposition Electrons Indium phosphide Monitoring Nonhomogeneous media Organic chemicals Strain control X-ray diffraction |
Title | In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption |
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