In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium th...

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Published in:1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) pp. 268 - 271
Main Authors: Heedon Hwang, Tae-Wan Lee, Youngboo Moon, Euijoon Yoon, Young Dong Kim
Format: Conference Proceeding
Language:English
Published: IEEE 1998
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Abstract InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain the As compositional profile which was carried over into the InP layer.
AbstractList InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain the As compositional profile which was carried over into the InP layer.
Author Young Dong Kim
Heedon Hwang
Euijoon Yoon
Tae-Wan Lee
Youngboo Moon
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  surname: Young Dong Kim
  fullname: Young Dong Kim
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Snippet InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As...
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StartPage 268
SubjectTerms Application specific processors
Ash
Chemical vapor deposition
Electrons
Indium phosphide
Monitoring
Nonhomogeneous media
Organic chemicals
Strain control
X-ray diffraction
Title In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption
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