In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium th...

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Bibliographic Details
Published in:1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) pp. 268 - 271
Main Authors: Heedon Hwang, Tae-Wan Lee, Youngboo Moon, Euijoon Yoon, Young Dong Kim
Format: Conference Proceeding
Language:English
Published: IEEE 1998
Subjects:
Application specific processors
Ash
Chemical vapor deposition
Electrons
Indium phosphide
Monitoring
Nonhomogeneous media
Organic chemicals
Strain control
X-ray diffraction
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Summary:InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain the As compositional profile which was carried over into the InP layer.
ISBN:9780780345133
0780345134
DOI:10.1109/COMMAD.1998.791638