Study of key physical parameters of bulk semi-insulating GaAs for radiation detector fabrication

• Published in: Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) pp. 149 - 152
• Main Authors: Dubecky, F., Darmo, J., Krempasky, M., Necas, V., Pelfer, P.G., Bohacek, P., Sekacova, M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1998
• Subjects: Capacitance-voltage characteristics; Conducting materials; Conductivity; Gallium arsenide; Gamma ray detection; Gamma ray detectors; Gas detectors; Performance evaluation; Radiation detectors; Testing
• ISBN: 9780780343542; 0780343549
• DOI: 10.1109/SIM.1998.785096

Study of selected physical properties of bulk semi-insulating (SI) GaAs grown by LEC and VGF techniques, undoped and Cr-doped is presented. Conductivity, Hall, GDMS, I-V and C-V techniques were used for material and radiation detector characterisation. Detection performances of detectors have been tested using /sup 57/Co source of 122 keV gamma rays. Correlation between the physical properties of base materials and performances of detectors is presented. Physical parameters suitable for estimation of the detector grade bulk SI GaAs are discussed.