1.55 /spl mu/m high efficiency tapered DFB laser using UV 250 2-in technology process

We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron...

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Bibliographic Details
Published in:Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) pp. 33 - 36
Main Authors: Voiriot, V., Thedrez, B., Gentner, J.L., Rainsant, J.-M., Colson, V., Duchemin, C., Gaborit, F., Hubert, S., Lafragette, J.L., Pinquier, A., Roux, L., Fernier, B.
Format: Conference Proceeding
Language:English
Published: IEEE 1999
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Summary:We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity, and run to run reproducibility is simultaneously achieved. 15/spl deg//spl times/15/spl deg/ front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25/spl deg/C have been measured on 500 /spl mu/m long lasers.
ISBN:9780780355620
0780355628
ISSN:1092-8669
DOI:10.1109/ICIPRM.1999.773628