1.55 /spl mu/m high efficiency tapered DFB laser using UV 250 2-in technology process
We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron...
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Published in: | Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) pp. 33 - 36 |
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Main Authors: | , , , , , , , , , , , |
Format: | Conference Proceeding |
Language: | English |
Published: |
IEEE
1999
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Subjects: | |
Online Access: | Get full text |
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Summary: | We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity, and run to run reproducibility is simultaneously achieved. 15/spl deg//spl times/15/spl deg/ front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25/spl deg/C have been measured on 500 /spl mu/m long lasers. |
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ISBN: | 9780780355620 0780355628 |
ISSN: | 1092-8669 |
DOI: | 10.1109/ICIPRM.1999.773628 |