Numerical simulation of generation in n-SI-n structures

Numerical simulation of generation in n-SI-n structures

Numerical simulations demonstrate that generation in n-SI-n structures gradually modifies the structure electric field distribution.

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Bibliographic Details
Published in:Proceedings of the 7th Conference on Semi-insulating III-V Materials pp. 325 - 330
Main Authors: Viallet, J.E., Picoli, G., Turki, K.
Format: Conference Proceeding
Language:English
Published: IEEE 1992
Subjects:
Boundary conditions
Charge carrier processes
Doping
Electron traps
Iron
Numerical simulation
Photorefractive effect
Poisson equations
Radiative recombination
Semiconductor materials
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Description
Summary:Numerical simulations demonstrate that generation in n-SI-n structures gradually modifies the structure electric field distribution.
ISBN:0750302429
9780750302425
DOI:10.1109/SIM.1992.752719