Cryogenic performance of double-fused 1.5-/spl mu/m vertical cavity lasers

Cryogenic performance of double-fused 1.5-/spl mu/m vertical cavity lasers

The low-temperature performance of vertical cavity lasers (VCL's) is of interest for high-speed data transmission from superconducting and cryogenic semiconductor circuits. Our double-fused 1.5 /spl mu/m lasers employ a strain-compensated InGaAsP-InP multiquantum-well (MQW) active region that i...

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Bibliographic Details
Published in:Journal of lightwave technology Vol. 17; no. 3; pp. 503 - 508
Main Authors: Zhang, Y.M., Piprek, J., Margalit, N., Anzlowar, M., Bowers, J.
Format: Journal Article
Language:English
Published: IEEE 01-03-1999
Subjects:
Bandwidth
Circuits
Cryogenics
Current measurement
Data communication
Distributed Bragg reflectors
Quantum well devices
Semiconductor lasers
Temperature
Threshold current
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Summary:The low-temperature performance of vertical cavity lasers (VCL's) is of interest for high-speed data transmission from superconducting and cryogenic semiconductor circuits. Our double-fused 1.5 /spl mu/m lasers employ a strain-compensated InGaAsP-InP multiquantum-well (MQW) active region that is sandwiched between two AlGaAs-GaAs distributed Bragg reflectors. Continuous wave (CW) lasing at ambient temperature as low as 7 K is measured on the same type of top-emitting devices that previously lased at a record-high temperature of 337 K. The optimum temperature is found at 180 K giving minimum threshold current, maximum modulation bandwidth of 5 GHz, and more than 3 GHz/mA/sup 1/2/ modulation current efficiency. The optimum temperature agrees very well with the theoretical prediction. Further device optimization for cryogenic high-speed applications is discussed in detail.
ISSN:0733-8724
1558-2213
DOI:10.1109/50.749392