Recombination of Oxidation-Induced Silicon Interstitials at Si/siO/sub 2/ Interfaces in Soi Structures

Saved in:

Bibliographic Details
Published in:	1992 IEEE International SOI Conference pp. 70 - 71
Main Authors:	Boussey-Said, J., Guillemot, N., Stoemenos, J.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1992
Subjects:	Microelectronics Optical buffering Optical microscopy Oxidation Physics Radiative recombination Silicon devices Silicon on insulator technology Stacking Substrates
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!