Methods of measuring the electric-field-dependent absorbtion coefficient in quantum confined structures

• Published in: 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings pp. 293 - 296
• Main Authors: Siliquini, J.F., Xu, M.G., Umana Membreno, G.A., Clark, A., Dell, J.M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1996
• Subjects: Absorption; Electric variables measurement; Interference; Measurement errors; Photoconductivity; Potential well; Power measurement; Reflection; Robustness; Transistors
• ISBN: 0780333748; 9780780333741
• DOI: 10.1109/COMMAD.1996.610128

A review of methods measuring the electric-field-dependent absorption coefficient in quantum confined structures is presented. The methods proposed are based on an approximate modeling of a thin film structure which takes into account the reflections at the air-semiconductor interfaces and interference effects within the structure. It is shown that determination of the absorption coefficient from the measured photocurrent and transmitted power is the most robust against measurement errors and easiest to implement for complete modulator structures.