High-efficiency high-speed Ga/sub 1-x/Al/sub x/As light-emitting diode characteristics

• Published in: 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings pp. 79 - 82
• Main Authors: Tingting Zhang, Sugeta, T., Takemura, M., Edwards, P.J., Cheung, W.N., Lynam, P.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1996
• Subjects: Bandwidth; Current measurement; Density measurement; Epitaxial growth; High speed optical techniques; Light emitting diodes; Optical modulation; Power generation; Power measurement; Temperature measurement
• ISBN: 0780333748; 9780780333741
• DOI: 10.1109/COMMAD.1996.610075

We have studied the electrical and optical properties of high-efficiency high-speed light-emitting diodes, fabricated by single-step liquid phase epitaxy. The external quantum efficiency and the modulation bandwidth are measured as functions of drive current, hole concentration in the active region, and ambient temperature, respectively. Output power of 23 mW, external quantum efficiency of 30% and modulation bandwidth of 50 MHz were measured at room temperature and 50 mA drive current (60 A/cm/sup 2/ current density). The power-bandwidth product is the highest among those reported for Ga/sub 1-x/Al/sub x/As light-emitting diodes.