Photoluminescence and cathodoluminescence of ion implanted ZnS and ZnGa/sub 2/O/sub 4/ phosphors

• Published in: IEEE Conference Record - Abstracts. 1996 IEEE International Conference on Plasma Science p. 245
• Main Authors: Kalkhoran, N.M., Halverson, W.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1996
• Subjects: Annealing; Chemical vapor deposition; Laser modes; Luminescence; Phosphors; Photoluminescence; Radio frequency; Sputtering; Tellurium; Zinc compounds
• ISBN: 0780333225; 9780780333222
• ISSN: 0730-9244; 2576-7208
• DOI: 10.1109/PLASMA.1996.551472

Summary form only given. Photoluminescence (PL) and cathodoluminescence (CL) characteristics of ion implanted ZnS and ZnGa/sub 2/O/sub 4/ phosphors have been investigated. The host ZnS material was prepared by chemical vapor deposition and ZnGa/sub 2/O/sub 4/ thin films were deposited by RF sputtering. We have demonstrated high efficiency, well-saturated red, green, and blue PL and CL in ZnGa/sub 2/O/sub 4/ thin films implanted with Eu/sup +/, Mn/sup +/, and Ga/sup +/ ions, respectively. Our results indicate that the luminescence of these phosphors is critically dependent on the post-implantation annealing conditions. High efficiency green and blue PL and CL have been demonstrated in ion implanted ZnS:Cu,Al and ZnS:Ag,Al, respectively. We have shown that tellurium implantation produces a red shift of the characteristic pi, in ZnS:Mn/sup +2/ (using 325 nm HeCd laser) from 588 nm to 652 nm; the same ZnS(Te):Mn films under CL excitation show a more moderate shift toward the red. Selenium implantation has also been used successfully to modify ZnS phosphor host material and extend its PL and CL color gamut.