Electrophotographic patterning of a-Si:H

• Published in: Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays pp. 16 - 19
• Main Authors: Gleskova, N., Wagner, S., Shen, D.S.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1995
• Subjects: Amorphous silicon; Etching; Glass; Laser beam cutting; Photoconductivity; Printers; Printing; Semiconductor thin films; Substrates; Thin film circuits
• ISBN: 0780330560; 9780780330566
• DOI: 10.1109/AMLCD.1995.540950

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 /spl mu/m thick a-Si:H films deposited on /spl sim/50 /spl mu/m thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.