A 0.13-µm CMOS multi-band WCDMA/HSDPA receiver adopting silicon area reducing techniques

A 0.13-µm CMOS multi-band WCDMA/HSDPA receiver adopting silicon area reducing techniques

A multi-band WCDMA/HSDPA direct-conversion receiver to cover all six 3 GPP bands is implemented in a 0.13-m CMOS process. The integrated inductor structure sharing an inner diameter and the mixed-type DC offset correction technique are useful to reduce the increase of silicon area generated by reali...

Full description

Saved in:
Bibliographic Details
Published in:2009 IEEE Radio Frequency Integrated Circuits Symposium pp. 17 - 20
Main Authors: Hyunwon Moon, Juyoung Han, Seung-Il Choi, Dongjin Keum, Byeong-Ha Park
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2009
Subjects:
Baseband
CMOS
CMOS process
DCOC
direct-conversion
Frequency synthesizers
inductor
Inductors
Low pass filters
Low-noise amplifiers
multi-band
Multiaccess communication
Radio frequency
Silicon
Transceivers
WCDMA/HSDPA
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A multi-band WCDMA/HSDPA direct-conversion receiver to cover all six 3 GPP bands is implemented in a 0.13-m CMOS process. The integrated inductor structure sharing an inner diameter and the mixed-type DC offset correction technique are useful to reduce the increase of silicon area generated by realizing the multi-band multi-mode RF transceiver. The measured full-path receiver performance is NF of < 3 dB, IIP3 of > -17 dBm, and IIP2 of > +30 dBm for all six bands. Its current consumption including frequency synthesizer is 45 mA at 2.8 V supply.
ISBN:1424433770
9781424433773
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2009.5135480