Novel PEALD-Ru formation technique using H2 & H2/N2 plasma as a seed layer for direct CVD-Cu filling

• Published in: 2009 IEEE International Interconnect Technology Conference pp. 95 - 97
• Main Authors: Daekyun Jeong, Inoue, H., Ohno, Y., Namba, K., Shinriki, H.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-06-2009
• Subjects: Atomic layer deposition; Conductivity; Filling; Fluid flow; Hydrogen; Inductors; Plasma measurements; Plasma properties; Plasma temperature; Plugs
• ISBN: 9781424444922; 1424444926
• ISSN: 2380-632X; 2380-6338
• DOI: 10.1109/IITC.2009.5090350

In this paper, novel Ru film formation technique by plasma enhanced atomic layer deposition (PEALD) is reported to be extremely promising as a seed layer for direct CVD-Cu full filling. PEALD-Ru film property can be controlled by H 2 to N 2 gas flow ratio in plasma step. PEALD-Ru film using H 2 /N 2 mixed gas based plasma can provide low resistivity (20 muOmega-cm), sufficient Cu barrier property and 100% step-coverage. PEALD-Ru film using H 2 gas based plasma can provide (002) oriented Ru film, which is confirmed as good nucleation layer for CVD-Cu formation. Stacked film of Ru(H 2 )/ Ru(H 2 /N 2 ) is demonstrated to be attractive as an underneath for direct CVD-Cu full filling without void generation in 50 nm via pattern.