A low voltage graded-channel MOSFET (LV-GCMOS) for sub 1-volt microcontroller application

A low voltage graded-channel MOSFET (LV-GCMOS) for sub 1-volt microcontroller application

We report for the first time, a bulk silicon, low voltage graded-channel MOSFET (LV-GCMOS) capable of operating below 1 volt, while delivering the required circuit performance. Channel engineering enabled a lowering of the subthreshold slope by more than 10 mV/dec, allowing for a reduction in the th...

Full description

Saved in:
Bibliographic Details
Published in:1996 Symposium on VLSI Technology. Digest of Technical Papers pp. 178 - 179
Main Authors: John, J.P., Ilderem, V., Changhae Park, Teplik, J., Klein, K., Cheng, S.
Format: Conference Proceeding
Language:English
Published: IEEE 1996
Subjects:
Circuit optimization
Low voltage
Microcontrollers
MOSFET circuits
Silicon
Threshold voltage
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract We report for the first time, a bulk silicon, low voltage graded-channel MOSFET (LV-GCMOS) capable of operating below 1 volt, while delivering the required circuit performance. Channel engineering enabled a lowering of the subthreshold slope by more than 10 mV/dec, allowing for a reduction in the threshold voltage without causing excessive leakage. A 1-Volt HC08 based microcontroller has been built with this technology, achieving >1 MHz operation at 0.9 V, with low stand-by leakage.
AbstractList We report for the first time, a bulk silicon, low voltage graded-channel MOSFET (LV-GCMOS) capable of operating below 1 volt, while delivering the required circuit performance. Channel engineering enabled a lowering of the subthreshold slope by more than 10 mV/dec, allowing for a reduction in the threshold voltage without causing excessive leakage. A 1-Volt HC08 based microcontroller has been built with this technology, achieving >1 MHz operation at 0.9 V, with low stand-by leakage.
Author Klein, K.
Teplik, J.
Cheng, S.
John, J.P.
Ilderem, V.
Changhae Park
Author_xml – sequence: 1
  givenname: J.P.
  surname: John
  fullname: John, J.P.
  organization: Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA
– sequence: 2
  givenname: V.
  surname: Ilderem
  fullname: Ilderem, V.
  organization: Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA
– sequence: 3
  surname: Changhae Park
  fullname: Changhae Park
  organization: Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA
– sequence: 4
  givenname: J.
  surname: Teplik
  fullname: Teplik, J.
  organization: Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA
– sequence: 5
  givenname: K.
  surname: Klein
  fullname: Klein, K.
  organization: Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA
– sequence: 6
  givenname: S.
  surname: Cheng
  fullname: Cheng, S.
  organization: Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA
BookMark eNp9jk0PwUAYhDdB4vMHcHqPHFq73RY9ivhKiENFOMmqFytrt9kW8e9VOJvLk8lkJlMlRW00EtJk1GWMht3NIpqvXRaGPTeg_YHPC6Sak3LOfW9bJo00vdJcfhB4XlghuyEo84SHUZk4I5ytOOLRiS9Ca1SwXEWT8Rrai40zHeWmAydjIb0fgDmfCtxkbE1sdGaNUmhBJImSscik0XVSOgmVYuPHGmnlW6OZIxFxn1h5E_a1_57kf8M3naZB2A
ContentType Conference Proceeding
DBID 6IE
6IL
CBEJK
RIE
RIL
DOI 10.1109/VLSIT.1996.507843
DatabaseName IEEE Electronic Library (IEL) Conference Proceedings
IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume
IEEE Xplore All Conference Proceedings
IEEE Electronic Library Online
IEEE Proceedings Order Plans (POP All) 1998-Present
DatabaseTitleList
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Electronic Library Online
  url: http://ieeexplore.ieee.org/Xplore/DynWel.jsp
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
EndPage 179
ExternalDocumentID 507843
Genre orig-research
GroupedDBID 6IE
6IK
6IL
AAJGR
ACGHX
ALMA_UNASSIGNED_HOLDINGS
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CBEJK
IERZE
OCL
RIE
RIL
ID FETCH-ieee_primary_5078433
IEDL.DBID RIE
ISBN 078033342X
9780780333420
IngestDate Wed Jun 26 19:22:23 EDT 2024
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-ieee_primary_5078433
ParticipantIDs ieee_primary_507843
PublicationCentury 1900
PublicationDate 19960000
PublicationDateYYYYMMDD 1996-01-01
PublicationDate_xml – year: 1996
  text: 19960000
PublicationDecade 1990
PublicationTitle 1996 Symposium on VLSI Technology. Digest of Technical Papers
PublicationTitleAbbrev VLSIT
PublicationYear 1996
Publisher IEEE
Publisher_xml – name: IEEE
SSID ssj0000455229
Score 2.51749
Snippet We report for the first time, a bulk silicon, low voltage graded-channel MOSFET (LV-GCMOS) capable of operating below 1 volt, while delivering the required...
SourceID ieee
SourceType Publisher
StartPage 178
SubjectTerms Circuit optimization
Low voltage
Microcontrollers
MOSFET circuits
Silicon
Threshold voltage
Title A low voltage graded-channel MOSFET (LV-GCMOS) for sub 1-volt microcontroller application
URI https://ieeexplore.ieee.org/document/507843
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8MwDLboTpx4DcF4KAcOcMjWLKVpjmhsDGk8pE4TnKYlMVy6DnWr-PskKR0g7cItjmTHUiTbsf05ABfINVq3Lqmx3oxaK6mo0jGnGHIdsTDUCl1qYJiKx5fkth_Vc7Y9FgYRffMZtt3S1_LNQpcuVdaxsUsS8QACIZMKqrVOp9jIxB3pH-ZJyDmPuvV8nZqui5oslJ3JKL0fO6Re3K6E_vlcxfuWwc6_tNqF5g9Gjzyvvc8ebGF-AK83JFt8EmtyVtZOkPdiZtBQB-7NMSMPT-mgPyaXowm961niitiIlSxLRRh1LGTuuvO-m9czLMiv6nYTWpa3N6ROs-lHNaNiWinFD6GRL3I8AsJigYzHSr7ZEMh0pZIyYmJmBDOGC319DPsbBLQ27p7AdtW87DIRp9BYFSWeQbA05bm_lS-n6YzN
link.rule.ids 310,311,782,786,791,792,798,4054,4055,27934,54767
linkProvider IEEE
linkToHtml http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07T8MwED7RMsDEqwjKywMDDG7jOo2TEZWWVKQFKVEFU9TEV5aSorQRfx_bIQWkLmw-S7ZPsnR3vvu-M8A18hSVW_eoVN6MKiuZ0CR1OEWLpzazrDRBnRrwQzF-ce_7dtVn23BhENGAz7Clh6aWLxdpoVNlbRW7uDavwXbXFo4oyVrrhIqKTfSh5mnuWpxzu1N12KnkqqzJLK89CcJhpLl6Tqvc9s_3Ksa7DPb-pdc-NH5YeuR57X8OYAuzI3i9I_PFJ1FGZ6UsBXnLpxIl1fTeDOdk9BQO-hG5CSb0oaeEW6JiVrIsEsKoXkLeNT7vG74-x5z8qm83oKnW9nyqNYs_yi4VcakUP4Z6tsjwBAhzBDLuJN5MBUGy4yWeZzMxlYJJyUXaPYXDDRs0N85ewY4fjYI4GI4fz2DXQJk1Nq57DvVVXuAF1JayuDQ39AVGSJAk
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=1996+Symposium+on+VLSI+Technology.+Digest+of+Technical+Papers&rft.atitle=A+low+voltage+graded-channel+MOSFET+%28LV-GCMOS%29+for+sub+1-volt+microcontroller+application&rft.au=John%2C+J.P.&rft.au=Ilderem%2C+V.&rft.au=Changhae+Park&rft.au=Teplik%2C+J.&rft.date=1996-01-01&rft.pub=IEEE&rft.isbn=9780780333420&rft.spage=178&rft.epage=179&rft_id=info:doi/10.1109%2FVLSIT.1996.507843&rft.externalDocID=507843
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9780780333420/lc.gif&client=summon&freeimage=true
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9780780333420/mc.gif&client=summon&freeimage=true
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9780780333420/sc.gif&client=summon&freeimage=true