A low voltage graded-channel MOSFET (LV-GCMOS) for sub 1-volt microcontroller application

A low voltage graded-channel MOSFET (LV-GCMOS) for sub 1-volt microcontroller application

We report for the first time, a bulk silicon, low voltage graded-channel MOSFET (LV-GCMOS) capable of operating below 1 volt, while delivering the required circuit performance. Channel engineering enabled a lowering of the subthreshold slope by more than 10 mV/dec, allowing for a reduction in the th...

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Bibliographic Details
Published in:1996 Symposium on VLSI Technology. Digest of Technical Papers pp. 178 - 179
Main Authors: John, J.P., Ilderem, V., Changhae Park, Teplik, J., Klein, K., Cheng, S.
Format: Conference Proceeding
Language:English
Published: IEEE 1996
Subjects:
Circuit optimization
Low voltage
Microcontrollers
MOSFET circuits
Silicon
Threshold voltage
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Summary:We report for the first time, a bulk silicon, low voltage graded-channel MOSFET (LV-GCMOS) capable of operating below 1 volt, while delivering the required circuit performance. Channel engineering enabled a lowering of the subthreshold slope by more than 10 mV/dec, allowing for a reduction in the threshold voltage without causing excessive leakage. A 1-Volt HC08 based microcontroller has been built with this technology, achieving >1 MHz operation at 0.9 V, with low stand-by leakage.
ISBN:078033342X
9780780333420
DOI:10.1109/VLSIT.1996.507843