Photoacoustic investigation of the thermal and transport properties of SiC thin film on Si substratum

• Published in: Proceedings of International Conference on Microelectronics Vol. 1; pp. 161 - 164 vol.1
• Main Authors: Nikolic, P.M., Todorovic, D.M., Djuric, S., Bojicic, A.I., Stoemenos, J., Radulovic, K.T.
• Format: Conference Proceeding
• Language: English
• Published: IEEE Electron Devices Society 1995
• Subjects: Amplitude modulation; Frequency measurement; Frequency modulation; Laser beams; Optical modulation; Phase measurement; Phase modulation; Semiconductor thin films; Transistors; X-ray lasers
• ISBN: 9780780327863; 0780327861
• DOI: 10.1109/ICMEL.1995.500857

The possibility of determining thermal and transport properties of thin film /spl beta/-SiC on Si substratum was investigated using a photoacoustic method with heat transmission detection configuration. The type of the crystal structure of thin film /spl beta/-SiC was determined by the X-ray technique. Photoacoustic (PA) phase and amplitude spectra were measured and analyzed in the case when first the /spl beta/-SiC side was exposed to a frequency modulated laser beam and then the silicon substratum side was illuminated with a chopped light beam in the case where the SiC surface was in front of the detector-an electret microphone. The experimental results were numerically analyzed.