Fabrication of 2700-V 12- \hbox\Omega \cdot \hbox^ Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50

• Published in: IEEE electron device letters Vol. 29; no. 10; pp. 1135 - 1137
• Main Authors: Ghandi, R., Hyung-Seok Lee, Domeij, M., Buono, B., Zetterling, C.-M., Ostling, M.
• Format: Journal Article
• Language: English
• Published: IEEE 01-10-2008
• Subjects: Annealing; Bipolar junction transistors (BJTs); Bipolar transistors; Doping; Etching; Fabrication; Ion implantation; Ohmic contacts; Power transistors; Silicon carbide; Temperature; power transistors; Bipolar junction transistors (BJTs); silicon carbide
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2008.2004419

High-voltage blocking (2.7-kV) implantation-free SiC bipolar junction transistors with low ON-state resistance (12 mOmegaldrcm 2 ) and high common-emitter current gain of 50 have been fabricated. A graded-base doping was implemented to provide a low-resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial JTE without ion implantation. Eliminating all ion implantation steps in this approach is beneficial for avoiding high-temperature dopant activation annealing and for avoiding generation of lifetime-killing defects that reduce the current gain.