The dependence of hot carrier degradation on AC stress waveforms

The dependence of hot carrier degradation on AC stress waveforms

The hot carrier degradation of submicron n-channel FETs is characterized for various gate and drain pulse waveforms. The results are consistent with interface electron traps generated by hot holes. The results showed that inverters with small loads can degrade faster than inverters with large loads,...

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Bibliographic Details
Published in:26th Annual Proceedings Reliability Physics Symposium 1988 pp. 30 - 33
Main Authors: Cham, K.M., Fu, H.-s., Nishi, Y.
Format: Conference Proceeding
Language:English
Published: IEEE 1988
Subjects:
Circuits
Degradation
Electron traps
FETs
Hot carriers
Inverters
Stress
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Summary:The hot carrier degradation of submicron n-channel FETs is characterized for various gate and drain pulse waveforms. The results are consistent with interface electron traps generated by hot holes. The results showed that inverters with small loads can degrade faster than inverters with large loads, due to AC degradation effects. Device lifetime in circuits cannot in general be projected by DC data. The AC effect was also found to be dependent on device structure.< >
DOI:10.1109/RELPHY.1988.23421