A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers
This paper describes the design of a wideband SiGe low-noise amplifier (LNA) for 3.1-10.6 GHz ultra-wideband (UWB) wireless receivers. The LNA uses a circuit topology consisting of two gain stages in multiple feedback loops to achieve broadband flat gain together with low noise figure and good input...
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Published in: | IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 p. 4 pp. |
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Format: | Conference Proceeding |
Language: | English |
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Abstract | This paper describes the design of a wideband SiGe low-noise amplifier (LNA) for 3.1-10.6 GHz ultra-wideband (UWB) wireless receivers. The LNA uses a circuit topology consisting of two gain stages in multiple feedback loops to achieve broadband flat gain together with low noise figure and good input match. Fabricated in a 0.25 mum SiGe BiCMOS technology, the IC prototype delivers a flat power gain of nominal 20 dB and a noise figure of 2.8-4.7 dB over the entire UWB frequency band, while achieving an input IP3 of -8 dBm. The amplifier occupies only 0.34 mm 2 chip area and consumes 11 mA from a 2.7 V supply |
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AbstractList | This paper describes the design of a wideband SiGe low-noise amplifier (LNA) for 3.1-10.6 GHz ultra-wideband (UWB) wireless receivers. The LNA uses a circuit topology consisting of two gain stages in multiple feedback loops to achieve broadband flat gain together with low noise figure and good input match. Fabricated in a 0.25 mum SiGe BiCMOS technology, the IC prototype delivers a flat power gain of nominal 20 dB and a noise figure of 2.8-4.7 dB over the entire UWB frequency band, while achieving an input IP3 of -8 dBm. The amplifier occupies only 0.34 mm 2 chip area and consumes 11 mA from a 2.7 V supply |
Author | Bo Shi Yan Wah Chia |
Author_xml | – sequence: 1 surname: Bo Shi fullname: Bo Shi organization: Inst. for Infocomm Res., Singapore – sequence: 2 surname: Yan Wah Chia fullname: Yan Wah Chia organization: Inst. for Infocomm Res., Singapore |
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Snippet | This paper describes the design of a wideband SiGe low-noise amplifier (LNA) for 3.1-10.6 GHz ultra-wideband (UWB) wireless receivers. The LNA uses a circuit... |
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StartPage | 4 pp. |
SubjectTerms | BiCMOS integrated circuits Circuit topology Feedback loop Germanium silicon alloys Impedance matching Integrated circuit noise Low-noise amplifiers Noise figure Silicon germanium Ultra wideband technology |
Title | A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers |
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