A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers

• Published in: IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 p. 4 pp.
• Main Authors: Bo Shi, Yan Wah Chia
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2006
• Subjects: BiCMOS integrated circuits; Circuit topology; Feedback loop; Germanium silicon alloys; Impedance matching; Integrated circuit noise; Low-noise amplifiers; Noise figure; Silicon germanium; Ultra wideband technology
• ISBN: 9780780395725; 0780395727
• ISSN: 1529-2517; 2375-0995
• DOI: 10.1109/RFIC.2006.1651090

This paper describes the design of a wideband SiGe low-noise amplifier (LNA) for 3.1-10.6 GHz ultra-wideband (UWB) wireless receivers. The LNA uses a circuit topology consisting of two gain stages in multiple feedback loops to achieve broadband flat gain together with low noise figure and good input match. Fabricated in a 0.25 mum SiGe BiCMOS technology, the IC prototype delivers a flat power gain of nominal 20 dB and a noise figure of 2.8-4.7 dB over the entire UWB frequency band, while achieving an input IP3 of -8 dBm. The amplifier occupies only 0.34 mm 2 chip area and consumes 11 mA from a 2.7 V supply