Effect of implantation energy on surface pitting of SIMOX

Effect of implantation energy on surface pitting of SIMOX

A systematic study to determine the effect of dose and dose rate on implanting oxygen at 80 and 160 keV is reported. Samples were produced by implanting oxygen into p-type Si

Saved in:
Bibliographic Details
Published in:1991 IEEE International SOI Conference Proceedings pp. 108 - 109
Main Authors: Namavar, F., Cortesi, E., Manke, J.M., Kalkhoran, N.M., Buchanan, B.L., Pinizzotto, R.F., Yang, H.
Format: Conference Proceeding
Language:English
Published: IEEE 1991
Subjects:
Annealing
Energy measurement
Fabrication
Nitrogen
Oxygen
Scanning electron microscopy
Silicon
Temperature control
Temperature measurement
Transmission electron microscopy
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A systematic study to determine the effect of dose and dose rate on implanting oxygen at 80 and 160 keV is reported. Samples were produced by implanting oxygen into p-type Si
ISBN:9780780301849
0780301846
DOI:10.1109/SOI.1991.162880