VB-1 an N-channel In0.53Ga0.47As plasma oxide insulated gate inversion-mode fet

VB-1 an N-channel In0.53Ga0.47As plasma oxide insulated gate inversion-mode fet

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 29; no. 10; p. 1696
Main Authors: Liao, A.S.H., Tell, B., Leheny, R.F., Chang, T.Y., Nahory, R.E.
Format: Journal Article
Language:English
Published: IEEE 01-10-1982
Online Access:Get full text
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Description
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1982.20990