A 45 GHz GaAs FET MIC Oscillator-Doubler

A 45 GHz GaAs FET MIC Oscillator-Doubler

A 45 GHz MIC oscillator-doubler usinq the gate-to-drain nonlinearity of a common-drain GaAs FET has been investigated . This oscillator-doubler has a hiqh output power of 11.6 dBm, a high doubler efficiency of 9 dB and a high power efficiency of 1.6%.

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Bibliographic Details
Published in:1982 IEEE MTT-S International Microwave Symposium Digest pp. 283 - 285
Main Authors: Saito, T., Iwakuni, M., Sakane, T., Tokumitsu, Y.
Format: Conference Proceeding
Language:English
Published: 1982
Subjects:
Dielectrics
Frequency
Gallium arsenide
Impedance
Microwave FETs
Microwave integrated circuits
Microwave oscillators
Power generation
Power system harmonics
Voltage
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Description
Summary:A 45 GHz MIC oscillator-doubler usinq the gate-to-drain nonlinearity of a common-drain GaAs FET has been investigated . This oscillator-doubler has a hiqh output power of 11.6 dBm, a high doubler efficiency of 9 dB and a high power efficiency of 1.6%.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1982.1130691