A Monolithic 40 V/20 A GaN Half Bridge IC with Integrated Gate Drivers and Level-shifters

• Published in: 2024 Energy Conversion Congress & Expo Europe (ECCE Europe) pp. 1 - 6
• Main Authors: Palomo, Oncu Benli Marin, Thone, Jef, Ali, Rana Asad, Shousha, Mahmoud, Haug, Martin, Syshchyk, Olga, Borga, Matteo, Decoutere, Stefaan, Fossion, Marc, Mai, Tuan-Dat, Wens, Mike
• Format: Conference Proceeding
• Language: English
• Published: IEEE 02-09-2024
• Subjects: Europe; Gallium-Nitride; Gate drivers; half-bridge; Logic gates; monolithic integration; power electronics; Semiconductor device measurement; Stress; System-on-chip; Testing; Time measurement; Voltage control; Voltage measurement; wide bandgap
• DOI: 10.1109/ECCEEurope62508.2024.10751964

40 V-rated half-bridges are realized in 100 V Gallium-Nitride on Silicon (GaN-on-Si) and 100 V Gallium-Nitride on Silicon-on-Insulator (GaN-on-SOI) technologies from IMEC. Electrical characterization is done to investigate several key parameters such as on-resistance, gate and drain leakage, and output capacitance. The performance of GaN-on-Si and GaN-on-SOI technologies are compared. In addition, step-stress testing and key parameter drift analysis are performed on the GaN-on-Si half-bridges. Furthermore, a monolithic 40 V/20 A half-bridge with integrated gate drivers, level shifters, floating supplies, and dead time controller circuitry is realized in 100 V GaN-on-Si technology as a part of a point-of-load (PoL) converter achieving 80 % efficiency and reaching an integrated solution with IC active area of 44.15 mm 2 which is 35 % smaller compared to state-of-the-art commercial integrated solutions. Functionality tests are performed for integrated monolithic half-bridge chips. Finally, further testing is done on a system-level Si-GaN hybrid PoL converter.