Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films

The characterization of carrier dynamics in mercury cadmium telluride (HgCdTe) thin films is essential for novel applications in long-wave infrared detection. Here, we conduct a novel study of ultrahigh carrier mobilities in narrow-gap HgCdTe films as measured by both terahertz time-domain spectrosc...

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Bibliographic Details
Published in:	2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors:	Refvik, Nils B., Purschke, David N., Jensen, Charles E., Pan, Wenwu, Simpson, Howe R. J., Lei, Wen, Gu, Renjie, Antoszewski, Jarek, Umana-Membreno, Gilberto A., Faraone, Lorenzo, Hegmann, Frank A.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-09-2024
Subjects:	Cadmium compounds II-VI semiconductor materials Impurities Scattering Semiconductor device measurement Spectroscopy Tellurium Temperature measurement THz-TDS Time-domain analysis Time-resolved terahertz spectroscopy ultrafast carrier dynamics
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Summary:	The characterization of carrier dynamics in mercury cadmium telluride (HgCdTe) thin films is essential for novel applications in long-wave infrared detection. Here, we conduct a novel study of ultrahigh carrier mobilities in narrow-gap HgCdTe films as measured by both terahertz time-domain spectroscopy (THz-TDS) at equilibrium and time-resolved THz spectroscopy (TRTS) after ultrafast photoexcitation. The observed THz transmission through the photoexcited samples is accurately modelled by a three-layer thin-film formula. At low temperatures, the carrier mobility obtained by TRTS is significantly higher than that obtained by THz-TDS. We attribute this enhancement in the low-temperature photocarrier mobility to suppression of impurity scattering by photoexcited holes.
ISSN:	2162-2035
DOI:	10.1109/IRMMW-THz60956.2024.10697658