A 28-GHz Power Amplifier with Enhanced Back-Off Efficiency Based on 65-nm CMOS Process

A design of 28-GHz Doherty Power Amplifier (PA) for mm-wave communication system applications was introduced. It contains 2-way (main and auxiliary) and 2-stage amplifiers. A 1/4λ transmission line was used to form a 90-degree phase delay. Then a transformer-based output combiner was designed. This...

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Bibliographic Details
Published in:	2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT) Vol. 1; pp. 01 - 03
Main Authors:	Dou, Bingfei, Zhou, Yixin, Sun, Jinzhong, Liu, Jing, Long, Shibing
Format:	Conference Proceeding
Language:	English
Published:	IEEE 16-05-2024
Subjects:	CMOS process Millimeter wave measurements Millimeter wave technology Power amplifiers Power transmission lines Semiconductor device measurement Transmission line measurements
Online Access:	Get full text
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Summary:	A design of 28-GHz Doherty Power Amplifier (PA) for mm-wave communication system applications was introduced. It contains 2-way (main and auxiliary) and 2-stage amplifiers. A 1/4λ transmission line was used to form a 90-degree phase delay. Then a transformer-based output combiner was designed. This Doherty PA was fabricated in a 65-nm CMOS process and the chip size is 0.28 mm 2 . The S-parameters and large signal performance of the fabricated PA were measured. It exhibited a P sat of 20 dBm, and power-added-efficiency (PAE) of 21.6% at 26 GHz. And PAE at 6-dB power-back-off (PBO) can achieve 17.2%.
ISSN:	2994-3124
DOI:	10.1109/ICMMT61774.2024.10672096