Demonstration of the p-GaN Gate HEMT with Crystalline GaOx/GaOxN1-xPassivation

• Published in: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 303 - 306
• Main Authors: Zhang, Yuanlei, Duan, Jiachen, Liang, Ye, Wang, Weisheng, Kong, Zhijie, Zhang, Jie, Liu, Wen
• Format: Conference Proceeding
• Language: English
• Published: IEEE 02-06-2024
• Subjects: HEMT; HEMTs; Logic gates; MODFETs; oxygen plasma treatment; p-GaN; passivation; Plasmas; Power semiconductor devices; Temperature; Transforms
• ISSN: 1946-0201
• DOI: 10.1109/ISPSD59661.2024.10579618

We investigate GaN HEMT devices with a crystalline \text{GaO}_{\mathrm{x}}/\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}} passivation layer. The p-GaN layer, subjected to oxygen plasma treatment (OPT) and post-annealing process (PA), transforms into a \text{GaO}_{\mathrm{x}}/\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}} layer, leading to the recovery of the depleted two-dimensional electron gas (2DEG) underneath. The p-GaN HEMTs with \text{GaO}_{\mathrm{x}}/\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}} passivation exhibit satisfactory characteristics at a PA temperature of 450°C with an I_{\text{ON}}/I_{\text{OFF}} ratio > 10^{8} . Additionally, the OFF-state breakdown voltage reached 1018 V for a gate-to-drain separation of 15 μm. The results indicate the merits of employing \text{GaO}_{\mathrm{x}}/\text{GaO}_{\mathrm{x}}\mathrm{N}_{1- \mathrm{x}} passivation to realize the p-GaN HEMT.