Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

• Published in: IEEE transactions on nanotechnology Vol. 5; no. 6
• Main Authors: Xiaohui, Tang, Reckinger, Nicolas, Bayot, Vincent, Krzeminski, Christophe, Dubois, Emmanuel, Villaret, Alexandre, Bensahel, Daniel
• Format: Journal Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers 06-11-2006
• Subjects: Engineering Sciences; Micro and nanotechnologies; Microelectronics; self-aligned floating gate; single-electron memory; nanotechnology; Coulomb blockade effect; arsenic-assisted etching and oxidation effects
• ISSN: 1536-125X
• DOI: 10.1109/TNANO.2006.883481

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application.