Recent Advances of Doped SnO[sub.2] as Electron Transport Layer for High-Performance Perovskite Solar Cells

• Published in: Materials Vol. 16; no. 18
• Main Authors: Hoang Huy, Vo Pham, Nguyen, Thi My Huyen, Bark, Chung Wung
• Format: Journal Article
• Language: English
• Published: MDPI AG 01-09-2023
• Subjects: Electron transport; Perovskite; Germany
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma16186170

Perovskite solar cells (PSCs) have garnered considerable attention over the past decade owing to their low cost and proven high power conversion efficiency of over 25%. In the planar heterojunction PSC structure, tin oxide was utilized as a substitute material for the TiO[sub.2] electron transport layer (ETL) owing to its similar physical properties and high mobility, which is suitable for electron mining. Nevertheless, the defects and morphology significantly changed the performance of SnO[sub.2] according to the different deposition techniques, resulting in the poor performance of PSCs. In this review, we provide a comprehensive insight into the factors that specifically influence the ETL in PSC. The properties of the SnO[sub.2] materials are briefly introduced. In particular, the general operating principles, as well as the suitability level of doping in SnO[sub.2], are elucidated along with the details of the obtained results. Subsequently, the potential for doping is evaluated from the obtained results to achieve better results in PSCs. This review aims to provide a systematic and comprehensive understanding of the effects of different types of doping on the performance of ETL SnO[sub.2] and potentially instigate further development of PSCs with an extension to SnO[sub.2]-based PSCs.