Specific features and nature of the 890 nm photoluminescence band detected in Si[O.sub.x] films after low-temperature annealing

A band with a peak at 890 nm is detected in the photoluminescence spectra of Si[O.sub.x] (x ≅ 1.3) films deposited by thermal evaporation of SiO and annealed in air at 650-1150°C. The 890-nm band appears after low-temperature (~650°C) annealing and exhibits a number of features: (i) as the annealing...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 45; no. 11; p. 1414
Main Authors: Vlasenko, N.A, Sopinskii, N.V, Gule, E.G, Manoilov, E.G, Oleksenko, P.F, Veligura, L.I, Mukhlyo, M.A
Format: Journal Article
Language:English
Published: Springer 01-11-2011
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A band with a peak at 890 nm is detected in the photoluminescence spectra of Si[O.sub.x] (x ≅ 1.3) films deposited by thermal evaporation of SiO and annealed in air at 650-1150°C. The 890-nm band appears after low-temperature (~650°C) annealing and exhibits a number of features: (i) as the annealing temperature is elevated to 1150°C, the position of the band peak remains unchanged, whereas the intensity increases by two orders of magnitude; (ii) the effects of the annealing atmosphere (air, vacuum) and the excitation wavelength and power density on the intensity of the 890-nm band differ from the corresponding effects on the wellknown bands observable in the ranges 600-650 and 700-800 nm; and (iii) the photoluminescence decay is first fast and then much slower, with corresponding lifetimes of ~9 and ~70 μs. The observed features are inconsistent with the interpretation of photoluminescence observed in Si[O.sub.x] so far. Specifically, the earlier observed photoluminescence was attributed to transitions between the band and defect states in the matrix and between the states of band tails, transitions inside Si nanoclusters, and intraion transitions in rare-earth impurity ions. Therefore, we consider here the possibility of attributing the 890-nm band to transitions in local centers formed by silicon ions twofold- and/or threefold-coordinated with oxygen; i.e., we attempt to interpret the 890-nm band in the same manner as was done for luminescence in Si[O.sub.2] glasses and films slightly deficient in oxygen. DOI: 10.1134/S1063782611110273
ISSN:1063-7826
DOI:10.1134/S1063782611110273